Sci. Adv. Today 2 (2016) 25228  
  Review Article  
   
   
         
Novel metal ion doped photonic materials with ultrabroadband near-infrared luminescence  
  Gongxun Baia,b and Jianhua Haoa,b  
     
a Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, People’s Republic of China
b The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, People’s Republic of China

   
  Abstract  
  Near-infrared (NIR) luminescent materials have continuously received much attention, as they are promising for practical applications in controlling and processing light as active components in optical telecommunication systems, biomedicine, and light sources. Recently, new findings on the ultrabroadband NIR emission from novel Ni-doped and Bi-doped photonic materials are very attractive. Followed by the developed rare-earth doped photonic materials, Ni- and Bi-doped materials are of great interest in developing a new generation of tunable lasers and broadband optical amplifiers. Remarkable progress in the research of the novel metal ions doped photonic materials has been made over the last decade. The aim of this review is to present a general overview of the current state-of-the art in various Ni-doped and Bi-doped photonic materials, including the features, advantages and limitations of the materials as well as the future research trends.  
     
   
  Cite this article as:  
  Gongxun Bai and Jianhua Hao, Novel metal ion doped photonic materials with ultrabroadband near-infrared luminescence, Sci. Adv. Today 2 (2016) 25228.