Sci. Adv. Today 2 (2016) 25230  
  Research Article  
   
   
         
Silicon nanowire heterostructures: growth strategies, novel properties and emerging applications  
  Ramesh Ghosha and P. K. Giria,b  
     
a Department of Physics, Indian Institute of Technology Guwahati, Guwahati -781039, India
b Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati -781039, India

   
  Abstract  
  In recent years, semiconductor nanowires (NWs) have drawn enormous attention due to their unique optoelectronic properties and excellent performance in variety of applications. With the introduction of NW heterostructures (HSs) into the device, the device performance is improved significantly in many cases. Due to the ease of fabrication, excellent optoelectronic properties and compatibility of forming HS with different inorganic/organic materials, Si NW HSs have attracted a great deal of research interest in last decades. The Si NW HSs exhibit interesting size, shape, and material-dependent properties that are unique when compared with the single-component material. Here we review the recent developments in Si NW HSs: fabrication techniques, their properties (e.g., light emission, antireflection, photocatalysis, electrical, photovoltaic and sensing etc.) and related emerging applications in electronics, photonics, catalysis, sensing and photovoltaics etc. The problems and challenges of utilizing the Si NW HS in the device applications and the key parameters to improve the device performances are discussed extensively. The bottlenecks in the commercialization of the Si NW HS based devices and future outlook of the field are presented at the end.  
     
   
  Cite this article as:  
  Ramesh Ghosh and P. K. Giri, Silicon nanowire heterostructures: growth strategies, novel properties and emerging applications, Sci. Adv. Today 2 (2016) 25230.