Sci. Adv. Today 2 (2016) 25244  
  Research Article  
   
   
         
Observation of Landau quantization and Berry phase in hydrogen-intercalated epitaxial graphene on SiC  
  Cheng-Jung Shiha, Shun-Tsung Lob, Hsin-Yen Leea, Randolph E. Elmquistc, and Chi-Te Lianga  
     
a Department of Physics, National Taiwan University, Taipei, 10617, Taiwan
b Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
c National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA

   
  Abstract  
  We report the magneto-transport behavior of hydrogen-intercalated epitaxial graphene grown on silicon carbide substrate. We analyze both the longitudinal and Hall resistances to determine the carrier concentration and mobility in the low field regime, as well as the effective mass and the quantum mobility from the Shubnikov-de Haas oscillations in the high field regime. The intrinsic Berry phase within our device is found to be 1.3p, indicating that our device consists mostly of a single layer graphene, and the expected four-fold Landau-level degeneracy is confirmed in our data, with the experimental result gLL = 4.1.  
     
   
  Cite this article as:  
  Cheng-Jung Shih, Shun-Tsung Lo, Hsin-Yen Lee, Randolph E. Elmquist, and Chi-Te Liang, Observation of Landau quantization and Berry phase in hydrogen-intercalated epitaxial graphene on SiC, Sci. Adv. Today 2 (2016) 25244.